Simulation and Experimental Study of the Optical Properties of Black Silicon Synthesized by Reactive Ion Etching
Received: 21 November 2025 | Revised: 23 December 2025 | Accepted: 3 January 2026 | Online: 5 February 2026
Corresponding author: Gagik Ayvazyan
Abstract
This work presents a combined numerical and experimental study of the optical properties of black Silicon (b-Si), which is synthesized by reactive ion etching. Finite-Difference Time-Domain (FDTD) simulations based on a periodic nanocone model were used to analyze how nanostructure geometry influences spectral absorption, reflectance, and transmittance. The modeling results show that nanocone heights in the range of 650-700 nm and dense packing conditions, where the base diameter approaches the periodicity, provide optimal broadband antireflection. Experimental measurements confirm a reduction of the average reflectance to below ~2–3% in the visible range (400-700 nm) for b-Si layers with heights around 670 nm, in good agreement with simulation trends. The results establish quantitative geometric design rules for the targeted fabrication of broadband antireflective silicon surfaces and demonstrate the potential of b-Si for applications in silicon solar cells, photodetectors, and other optoelectronic devices.
Keywords:
black silicon, solar cell, optical propеrties, morphology, FDTD simulationDownloads
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